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d a t a sh eet product speci?cation supersedes data of 2003 jun 13 2005 jun 03 discrete semiconductors BGF802-20 cdma800 power module m3d737
2005 jun 03 2 philips semiconductors product speci?cation cdma800 power module BGF802-20 features typical cdma is95 performance at a supply voltage of 28 v: C output power = 3 w C gain = 30 db C efficiency = 18% C acpr < - 53 dbc at 750 khz and bw = 30 khz C acpr < - 69 dbc at 1.98 mhz and bw = 30 khz. low distortion to cdma signals excellent 2-tone performance low die temperature due to copper flange integrated temperature compensated bias 50 w input/output system flat gain over frequency range. applications base station rf power amplifiers in the 869 to 894 mhz frequency range cdma is95, cdma2000, multi carrier applications macrocell (driver stage) and microcell (final stage). description 25 w ldmos power amplifier module for base station amplifier applications in the 869 to 894 mhz range. pinning - sot365c pin description 1 rf input 2v s 3 rf output flange ground 23 1 top view mbl257 fig.1 simplified outline. quick reference data typical rf performance at t mb =25 c. notes 1. is95 cdma (pilot, paging, sync and traffic codes 8 - 13). 2. acpr 750 khz at 30 khz resolution bandwidth. 3. acpr 1.98 mhz at 30 khz resolution bandwidth. 4. acpr 400 khz at 30 khz resolution bandwidth. mode of operation f (mhz) v ds (v) p l (w) g p (db) h (%) acpr (dbc) evm (%) cw 869 to 894 28 25 29 48 -- is95 cdma (1) 869 to 894 28 3 30 18 - 53 (2) - 69 (3) - gsm edge 869 to 894 26 2.5 30 16 - 65 (4) 0.4
2005 jun 03 3 philips semiconductors product speci?cation cdma800 power module BGF802-20 limiting values in accordance with the absolute maximum rating system (iec 60134). characteristics t mb =25 c; v s = 28 v; p l = 3.0 w; f = 869 to 894 mhz; z s =z l =50 w; unless otherwise speci?ed. note 1. g pi is small signal in-band gain. symbol parameter min. max. unit v s dc supply voltage - 30 v p d input drive power - 100 mw p l load power - 30 w t stg storage temperature - 40 +100 c t mb operating mounting base temperature - 20 +90 c symbol parameter conditions min. typ. max. unit i dq quiescent current (pin 2) p d = 0 mw 245 280 320 ma p 1db load power at 1 db gain compression 18 25 - w g p power gain 28 30 32 db d g p freq gain ?atness over frequency range - 0.2 1 db d g p pwr gain ?atness over power band p l = 30 mw up to 3 w - 0.8 - 0.2 0.2 db dj freq phase linearity over frequency range - 0.2 - deg delay ?atness - 200 - ps g ob out of band gain small signal, p d = 0 dbm; 894 mhz < f < 869 mhz -- g pi max +1 note 1 db vswr in input vswr - 1.6:1 2:1 h 2 second harmonic -- 37 - 34 dbc h 3 third harmonic -- 61 - 58 dbc stability vswr 3 : 1 through all phases; v s2 =25to28v all spurious outputs more than 60 db below desired signal ruggedness vswr = 10 : 1 through all phases; p l =5w no degradation in output power is95 cdma (p l = 3 w average) h ef?ciency 15 18 - % acpr 750 khz spectral regrowth; measured in 30 khz rbw -- 53 - 49 dbc acpr 1.98 mhz -- 69 - 66 dbc
2005 jun 03 4 philips semiconductors product speci?cation cdma800 power module BGF802-20 handbook, halfpage 024 8 30.4 30 29.2 28.8 29.6 40 30 10 0 20 6 mbl762 g p (db) g p h h (%) p l (av) (w) fig.2 is95 power gain and efficiency as functions of load power; typical values. f = 882 mhz. handbook, halfpage 024 8 p l (av) (w) - 40 - 65 - 45 6 - 50 - 55 - 60 mbl763 acpr 750 khz (dbc) fig.3 acpr at 750 khz as a function of output power; typical values. f = 882 mhz. handbook, halfpage 024 8 - 60 - 64 - 72 - 76 - 68 6 mbl764 p l (av) (w) acpr 1.98 mhz (dbc) fig.4 acpr at 1.98 mhz as a function of output power; typical values. f = 882 mhz. handbook, halfpage 0102030 51525 30.4 28 28.8 29.6 28.4 29.2 30 60 g p (db) h (%) p l (w) 0 20 40 10 30 50 mbl765 g p h fig.5 cw power gain and efficiency as functions of load power; typical values. f = 882 mhz.
2005 jun 03 5 philips semiconductors product speci?cation cdma800 power module BGF802-20 handbook, halfpage 048 16 30.4 30 29.2 28.8 29.6 48 36 12 0 24 12 mbl766 g p (db) g p h h (%) p l (av) (w) fig.6 two tone power gain and efficiency as functions of load power; typical values. f 1 = 882 mhz; f 2 = 883 mhz. handbook, halfpage 048 16 - 20 - 70 - 30 d im (dbc) p l (av) (w) 12 - 40 - 50 - 60 mbl767 d 3 d 5 d 7 fig.7 two tone intermodulation distortion as function of load power; typical values. f 1 = 882 mhz; f 2 = 883 mhz. handbook, halfpage - 58 0 p l (av) (w) 412 - 68 8 2610 - 66 - 64 - 62 - 60 mbl768 acpr 400 khz (dbc) fig.8 gsm edge acpr at 400 khz as a function of load power; typical values. f = 882 mhz. handbook, halfpage 04 12 4 evm rms (%) p l (av) (w) 3 1 0 2 8 2610 mbl769 fig.9 gsm edge rms evm as a function of load power; typical values. f = 882 mhz.
2005 jun 03 6 philips semiconductors product speci?cation cdma800 power module BGF802-20 handbook, halfpage 04 12 12 0 4 8 2 6 10 evm m (%) p l (av) (w) 8 2610 mbl770 fig.10 gsm edge peak evm as a function of load power; typical values. f = 882 mhz. handbook, halfpage 750 850 950 1050 31 21 29 27 25 23 0 - 30 - 6 - 12 - 18 - 24 mbl771 s 21 (db) s 21 s 11 s 11 s 11 (db) f (mhz) fig.11 s-parameters as a function of frequency.
2005 jun 03 7 philips semiconductors product speci?cation cdma800 power module BGF802-20 mounting recommendations general ldmost base station modules are manufactured with the dies directly mounted onto a copper flange. the matching and bias circuit components are mounted on a printed-circuit board (pcb), which is also soldered onto the copper flange. the dies and the pcb are encapsulated in a plastic cap, and pins extending from the module provide a means of electrical connection. this construction allows the module to withstand a limited amount of flexing, although bending of the module is to be avoided as much as possible. mechanical stress can occur if the bottom surface of the module and the surface of the amplifier casing (external heatsink) are not mutually flat. this, therefore, should be a consideration when mounting the module in the amplifier. another cause of mechanical stress can arise from thermal mismatch after soldering of the pins. precautions should be taken during soldering, and efforts made to ensure a good thermal contact between the flange and the external heatsink. external heatsink (ampli?er casing) the module should always be mounted on a heatsink with a low thermal resistance to keep the module temperature as low as possible. the mounting area of the heatsink should be flat and free from burrs and loose particles. we recommend a flatness for the mounting area of between 50 m m concave and 50 m m convex. the 50 m m concave value is to ensure optimal thermal behaviour, while the 50 m m convex value is intended to limit mechanical stress due to bending. in order to ensure optimal thermal behaviour, the use of thermal compound is recommended when mounting the module onto the amplifier external heatsink. the following recommended thermal compounds have a thermal conductivity of >0.5 w/mk: wps ii (silicone-free) from austerlitz-electronics comp. trans. from kf 340 from dow corning trans-heat from e. friis-mikkelsen. the use of thermal pads instead of thermal compound is not recommended as the pads may not maintain a uniform flatness over a period of time. mounting p reparation ensure that the surface finishes are free from burrs, dirt and grease. c aution during the following procedures esd precautions should be taken to protect the device from electrostatic damage. p rocedure 1. apply a thin, evenly spread layer of thermal compound to the module flange bottom surface. excessive use of thermal compound may result in increased thermal resistance and possible bending of the of the flange. too little thermal compound will result in an increase in thermal resistance. 2. take care that there is some space between the cap and the pcb. bring the module into contact with the external heatsink casing, ensuring that there is sufficient space for excessive thermal compound to escape. 3. carefully align the module with the heatsink casing mounting holes, and secure with two 3 mm bolts and two flat washers. initially tighten the bolts to finger tight (approximately 0.05 nm). using a torque wrench, tighten each bolt in alternating steps to a final torque of 0.4 nm. 4. after the module is secured to the casing, the module leads may be soldered to the pcb. the leads are for electrical connection only, and should not be used to support the module at any time in the assembly process. a soldering iron may be used up to a temperature of 250 c for a maximum of 10 seconds. avoid contact between the soldering iron and the plastic cap. electrical connections the main ground path of all modules is via the flange. it is therefore important that the flange is well grounded and that return paths are kept as short as possible. an incorrectly grounded flange can result in a loss of output power or in oscillation. the rf input and output of the module are designed for 50 w connections. incoming inspection when incoming inspection is performed, use a properly designed test fixture to avoid excessive mechanical stress and to ensure optimal rf performance. philips can deliver dedicated test fixtures on request.
2005 jun 03 8 philips semiconductors product speci?cation cdma800 power module BGF802-20 application information handbook, halfpage temperature compensated gate bias c1 c3 c5 r1 l1 c2 c4 + v s 50 w output 50 w input mbl781 z 1 z 2 fig.12 test circuit. list of components (see figs 12 and 13) note 1. the striplines are on a double copper-clad printed-circuit board (ro5880) with e r = 2.2 and thickness = 0.79 mm. component description value catalogue number c1, c3 multilayer x7r ceramic chip capacitor 100 nf; 50 v c2, c5 tantalum smd capacitor 10 m f; 35 v c4 electrolytic capacitor 100 m f; 35 v l1 grade 4s2 ferroxcube bead 4330 030 36300 r1 metal ?lm resistor 10 w ; 0.4 w 2322 195 13109 z 1 , z 2 stripline; note 1 50 w
2005 jun 03 9 philips semiconductors product speci?cation cdma800 power module BGF802-20 handbook, full pagewidth 90 42 mbl780 c5 r1 c4 c3 c2 c1 z 2 z 1 l1 output 50 w input 50 w dut fig.13 printed-circuit board and component layout. dimensions in mm.
2005 jun 03 10 philips semiconductors product speci?cation cdma800 power module BGF802-20 package outline unit q b z c e u 2 u 1 u fp q references outline version european projection issue date 01-06-06 02-11-13 iec jedec jeita mm 4.0 3.8 0.56 0.46 a 9.5 9.0 0.3 0.2 d 30.1 29.9 e 18.6 18.4 12.8 12.6 3.55 3.45 41.75 41.65 2.54 e 1 20.32 3.3 3.1 l 3.7 3.3 7.75 7.55 u 3 1.1 0.0 15.4 15.2 48.4 48.0 0.3 0.25 vw 0.1 y dimensions (mm are the original dimensions) sot365c 0 10 20 mm scale plastic rectangular single-ended flat package; flange mounted; 2 mounting holes; 3 in-line leads sot365c p u 2 u 3 f a u 1 u d q e l y q c v a a w m b z 23 1 e 1 e
2005 jun 03 11 philips semiconductors product speci?cation cdma800 power module BGF802-20 data sheet status notes 1. please consult the most recently issued data sheet before initiating or completing a design. 2. the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. 3. for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. level data sheet status (1) product status (2)(3) definition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn). definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change notification (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
? koninklijke philips electronics n.v. 2005 sca76 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. philips semiconductors C a worldwide company contact information for additional information please visit http://www.semiconductors.philips.com . fax: +31 40 27 24825 for sales of?ces addresses send e-mail to: sales.addresses@www.semiconductors.philips.com . printed in the netherlands r02/06/pp 12 date of release: 2005 jun 03 document order number: 9397 750 15203

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